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NTD6416ANL, NVD6416ANL
N-Channel Power MOSFET
100 V, 19 A, 74 m W
Features
? Low R DS(on)
? High Current Capability
? 100% Avalanche Tested
? AEC ? Q101 Qualified and PPAP Capable ? NVD6416ANL
? These Devices are Pb ? Free and are RoHS Compliant
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
100 V
http://onsemi.com
R DS(on) MAX
74 m W @ 10 V
I D MAX
19 A
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage ? Continuous
V DSS
V GS
100
$ 20
V
V
D
Continuous Drain
Current
Power Dissipation
Steady
State
Steady
State
T C = 25 ° C
T C = 100 ° C
T C = 25 ° C
I D
P D
19
13
71
A
W
G
S
Pulsed Drain Current t p = 10 m s
Operating and Storage Temperature Range
Source Current (Body Diode)
Single Pulse Drain ? to ? Source Avalanche
Energy (V DD = 50 Vdc, V GS = 10 Vdc, I L(pk) =
18.2 A, L = 0.3 mH, R G = 25 W )
Lead Temperature for Soldering
Purposes, 1/8 ″ from Case for 10 Seconds
I DM
T J , T stg
I S
E AS
T L
70
? 55 to
+175
19
50
260
A
° C
A
mJ
° C
4
1 2
3
DPAK
CASE 369AA
STYLE 2
4
1
2
3
IPAK
CASE 369D
STYLE 2
THERMAL RESISTANCE RATINGS
MARKING DIAGRAM
Parameter
Symbol
Max
Unit
& PIN ASSIGNMENTS
Junction ? to ? Case (Drain) ? Steady State
R q JC
2.1
° C/W
4 Drain
4 Drain
Junction ? to ? Ambient ? Steady State (Note 1)
R q JA
47
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
1
Gate
2
Drain
3
Source
1
Gate
2
3
Source
6416ANL
Y
WW
G
= Device Code
= Year
= Work Week
= Pb ? Free Package
Drain
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2012
June, 2012 ? Rev. 4
1
Publication Order Number:
NTD6416ANL/D
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